The Study of Sputtered SiGe Thin Film Growth for Photo-detector Application

摘要: Samsung Display LCD RD Revised May 3, 2012; Accepted 10, 2012) Abstract: For the application of photo-detector as active layer, we have studied how to deposit SiGe thin film using an independent Si target and Ge target, respectively. Both targets were synthesized by purity 99.999%. Plasma generators generated radio frequency (rf, 13.56 MHz) direct current (dc) power. When sputtered dc rf power, respectively, could observe growth highly crystalline at temperature 400℃ from result raman spectroscopy X-ray diffraction method. However, did not above Inversely, changed position like that Although without sputtering deteriorated considerably, was observed with increase evaluated microcrystalline phase which included (111) (220) plane method.Keywords: Microcrystalline SiGe, Sputtering, Raman spectroscopy, IR detector, Touch screen