Conductivity and Impurity Doping on Single Crystal Diamond

摘要: It has been shown that p- and n-type doped diamond films combinations can be applied for a variety of electronic optoelectronic applications. To achieve success, comprehensive knowledge doping technology related analysis techniques are required. For p-type doping, the impurity boron is easily incorporated into both natural synthesized diamond, whereas which not present in nature, recently developed by phosphorus doping. Progress semiconductors stimulated extensive research on various types p-n junction devices, bringing closer to practical applications future electronics.