A Model for DX Centers: Bond Reconstruction due to Local Random Donor-Host Atom Configurations in Mixed Semiconductor Alloys

作者: Keisuke L. I. Kobayashi , Yoko Uchida , Hisao Nakashima

DOI: 10.1143/JJAP.24.L928

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摘要: A bond reconstruction model for DX centers is proposed. The assumes the inherent instability in sp3 covalent bonding between donor and host atoms indirect gap regime. This due to localization of bound electrons. results which governed by local atom configurations around atoms. are resultant self-generated vacancy pairs.

参考文章(2)
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Tomonori Ishikawa, Kazuo Kondo, Satoshi Hiyamizu, Akihiro Shibatomi, Influence of MBE Growth Conditions on Persistent Photoconductivily Effects in N-AlGaAs and Selectively Doped GaAs/AlGaAs Heterostructures Japanese Journal of Applied Physics. ,vol. 24, pp. L408- L410 ,(1985) , 10.1143/JJAP.24.L408