Zinc Malonate Based Precursors for MOCVD of ZnO

作者: Daniela Bekermann , Diane Pilard , Roland Fischer , Anjana Devi

DOI: 10.1149/1.3207646

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摘要: ZnO thin films have been investigated extensively because of their interesting electrical, optical and piezoelectric properties. Their superior material properties played an important role in various applications such as transparent conducting oxides (TCO), photodetectors etc. Metal organic vapor deposition (MOCVD) is a well established process for the growth high quality wide variety materials. The metal precursor plays key process. availability volatile metalorganic precursors possessing sufficient pressure, thermal stability during evaporation lower decomposition temperatures are some features desired. Diethyl zinc (DEZ) acetylacetonate [Zn(acac)2] most commonly CVD growth. However, they exhibit certain disadvantages there several reports where improved explored. Our research efforts concentrate on development alternative or complexes with aim obtaining fluorine free compounds which volatile, can be easily synthesized, handled scaled up practical applications. Bidentate ligands already proven to successful cases by [Zn(hfa)2(tmeda)] [1] malonate based Zr, Hf Ga respective oxide film [2]. Two ketoiminate were recently published that showed one-step behaviour TG reasonables melting [3]. Here, we focus synthesis evaluation other potential malonates analogous compounds. goal investigate influence different types chelating Zinc type [Zn{C(H)(R1C=O)(R2C=O)}2] (R1, R2: OMe, OEt) synthesized evaluated view possible application MOCVD ZnO.

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