Surface oxidation chemistry of β-SiC

摘要: Well-ordered, Si- and C-terminated β-SiC (100) surfaces were oxidized at low oxygen pressure high temperature to elucidate the mechanism of oxidation. The samples studied by resolution electron energy loss spectroscopy (HREELS), Auger spectroscopies, diffraction. Si-terminated exposed Tsub=1050 °C either O2 or hot filament-activated (O+O2*) then cooled without exhibited similar oxidation rates, surface composition, HREELS spectra. change from C-termination slightly shifted optical phonon. Activated played no discernible role in removal Si overlayer this temperature. Samples under conditions but Si-terminated, indicating that lost carbon as CO CO2 during cooldown. conversion did not occur because self-limiting etching a monolayer...