Solid-state imaging device and solid-state imaging device array

摘要: In an optical sensor unit (10) composed of pixels (A) array n lines and m columns, supply (13a, 13b) electrically connected to transfer electrodes (12a 12d) made polycrystalline silicon adapted for applying voltages are so provided as cover a part the surface light-shielded pixel (D). It is possible eliminate dead area at both horizontal ends conventionally needed provide lines, consequently can be widened. Further it decrease unimaged portion when such solid-state imaging devices horizontally arrayed adjacently. According output signal from light-shield (D) or another (A), in amount light inputted into corrected. Thus, device having decreased comprising wide realized.