Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electron-mobility transistors

摘要: We address degradation aspects of lattice-matched unpassivated InAlN/GaN high-electron-mobility transistors (HEMTs). Stress conditions include an off-state stress, a semi-on stress (with partially opened channel), and negative gate bias source drain contacts grounded). Degradation is analyzed by measuring the current, threshold voltage, Schottky contact barrier height, leakage ideality factor, access, intrinsic channel resistance, respectively. For drain-gate < 38 V parameters are only reversibly degraded due to charging pre-existing surface states. This in clear contrast reported AlGaN/GaN HEMTs where irreversible damage lattice relaxation have been found for similar conditions. biases over show again temporal changes stresses; however, was stresses. Most severe changes, increase resistance one order magnitude decrease current 70%, after 50 conclude that condition hot electrons may create defects or ionize deep states GaN buffer at interface. If HEMT during lack strain layer beneficial enhancing device stability.