Te-Ge-Sn-Au Phase Change Recording Film For Optical Disk

作者: Noboru Yamada , Masatoshi Takao , Mutsuo Takenaga

DOI: 10.1117/12.936820

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摘要: Te-Ge-Sn-Au thin films were studied for phase change type rewritable disk media, in order to obtain the fast crystallization speed and thermal stability. Films prepared by co-evaporation method. It was found that through static record/erase measurements threshold crystallizing pulse duration of Te60Ge4SnllAu25 film only 1 usec at 2 mW laser power; is less than one tenth compared with Te80Ge5Sn15 film, while amorphizing power them almost same, 6 0.2 psec regardless Au concentration. Its crystallizaton temperature about 130°C enough maintain good Through DSC, X-ray electron diffraction studies, first appeared crystalline state process, corresponding drastic optical property, showed metastable simple cubic(SC) structure. concluded appearance SC structure made higher. The obtained a candidate simultaneously erasable recordable material.

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