Electronic device using group iii nitride semiconductor and its fabrication method
作者： Daisuke Ueda , Tadao Hashimoto
DOI:
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摘要: The present invention discloses an electronic device formed of a group III nitride. In one embodiment, substrate is fabricated by the ammonothermal method and drift layer hydride vapor phase epitaxy. After etching trench, p-type contact pads are made pulsed laser deposition followed n-type deposition. bandgap pad designed larger than that layer. Upon forward bias between (gate) (source), holes electrons injected into from pads. Injected to backside (drain).
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