Magnetoresistance from quantum interference effects in ferromagnets

摘要: The desire to maximize the sensitivity of read/write heads (and thus information density) magnetic storage devices has stimulated interest in discovery and design new materials exhibiting magnetoresistance. Recent discoveries include 'colossal' magnetoresistance manganites enhanced low-carrier-density ferromagnets. An important feature these systems is that electrons involved electrical conduction are different from those responsible for magnetism. latter localized act as scattering sites mobile electrons, it field tuning strength ultimately gives rise observed Here we argue can arise by a mechanism certain ferromagnets--quantum interference effects rather than simple scattering. ferromagnets question disordered, magnets where same both properties conduction. resulting positive (that is, resistance increases response an applied field) only weakly temperature-dependent below Curie point.