Sn-doped BaO-TiO2-ZnO microwave ceramics
作者： Wu Shunhua , Wang Guoqing , Zhao Yushuang
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摘要: Sn-doped BaO-TiO 2 -ZnO (BTZ) microwave ceramic materials were investigated as a function of SnO content. Addition small amount (0.01-0.06 wt%) lowered the sintering temperature system to 1160 °C andalso greatly reduced dielectric loss (tan δ), which is closely related insulation resistivity. The BTZ found have excellent properties at 1 GHz with constant e 36, tangent tan δ ≤ I x 10 - 4 , coefficient constant, α, = 0 ′ 30 ppm/°C, and volume resistivity ρ v ≥ 3 Ω cm.
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