Metal-Germanium Contacts and Germanide Formation
作者： E. D. Marshall , C. S. Wu , C. S. Pai , D. M. Scott , S. S. Lau
DOI: 10.1557/PROC-47-161
关键词:
摘要: In this study, we survey germanide formation and characterize Schottky- barrier properties for a number of representative metals on Ge (Al, Ag, Au, Er, Ni, Pd, Pt, Ta Ti). It is found that the characteristics (sequence phase formation, kinetics, moving species) are similar to those corresponding silicides. The Schottky-barrier heights, however, all centered around 0.59 eV arida re relatively insensitive metallization.
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