作者: Henry F. Gray , Richard F. Greene
DOI:
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摘要: A field-emitter switching device wherein a positive pulse is applied to te (which held at bias potential V1 just below turn-on). collector higher than the gate in order collect emitted electrons from field emitter source. As voltage gate, are immediately source and travel most collector. Because of geometry, such electron transport extremely fast. The ultra-fast speed attained because reach near-maximum velocity within few tip diameters