Photoluminescence of Cd-doped p-InSe
作者： S Shigetomi , H Ohkubo , T Ikari , None
DOI: 10.1016/0022-3697(90)90137-5
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摘要: Abstract Photoluminescence (PL) spectra of Cd-doped InSe were measured in the 77 to 170 K temperature range. A new emission band at 1.21 eV is observed upon doping with Cd atoms and its PL intensity increases increasing dopant concentration. We find, from activation energy for dependence intensity, that not due band-impurity transition.
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