Ultrafast optical switching to a metallic state via photoinduced Mott transition in few-layer MoS 2 under hydrostatic pressure

摘要: Photoinduced Mott transition has been revealed as a superior method to control the optical and electronic properties in excited semiconductors on ultrashort timescales but corresponding ultrafast carrier dynamics underlying many-body interactions, together with their responses external stimuli besides excitation, are still poorly understood. Herein, we experimentally demonstrate that photoinduced few-layer ${\mathrm{MoS}}_{2}$ at room temperature can be achieved subtly tuned under mild excitation via hydrostatic pressure. Utilizing pump-probe spectroscopy, significant reduction of density by more than two orders magnitude gradual acceleration switching metallic electron-hole plasma state elevated pressures up $\ensuremath{\sim}3$ GPa revealed, which attributed exciton binding energy dissociation