The adsorption and thermal decomposition of acetylene on Si(100) and vicinal Si(100)9
作者： M. Nishijima , J. Yoshinobu , H. Tsuda , M. Onchi
DOI: 10.1016/S0039-6028(87)81134-2
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摘要: The adsorption and decomposition of acetylene on Si(100) vicinal Si(100)9° have been studied using high resolution electron energy loss spectroscopy low-energy diffraction. Acetylene is predominantly chemisorbed molecularly in the temperature range between 80 ~ 300 K; a small amount partially dissociated. molecularly-chemisorbed rehybridized, has hybridization state near sp 3 . It proposed that molecular di-σ bonded to adjacent Si atoms dimer Si(100).The thermal acetylene, (inactive) role played by steps are discussed.
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