Realization of a VCO for WLAN applications using 0.35 μm-siGe BICMOS technology

摘要: In this article, a 4.5–5.8 GHz, -Gm LC voltage controlled oscillator (VCO) for IEEE 802.11a standard is presented. The circuit designed with Austria MicroSystems 0.35 μm SiGe BiCMOS process that includes high-speed heterojunction bipolar transistors (HBTs). According to measurement results, phase noise -102.3 dBc-Hz at 1 MHz offset from 5 GHz carrier frequency. A linear, 1300 tuning range obtained utilizing accumulation-mode varactors. Phase relatively low because of the advantage differential concept. Output power fundamental frequency changes between -1.6 and 0.9 dBm depending on voltage. Average second third harmonic levels are -25 -41 dBm, respectively. draws 14 mA DC current 3.3 V supply including buffer circuits leading total dissipation 46.2 mW. prototype VCO occupies an area 0.6 mm2 Si substrate, RF pads. © 2008 Wiley Periodicals, Inc. Int J Microwave CAE, 2008.