Excitonic Absorption Spectra of GaAs-AlAs Superlattice at High Temperature
作者： Hidetoshi Iwamura , Hideki Kobayashi , Hiroshi Okamoto
DOI: 10.1143/JJAP.23.L795
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摘要: Optical absorption spectra of MBE grown GaAs–AlAs superlattices with various thickness the potential-well layer were measured in temperature range up to 500 K. The excitonic peak is observed even at a K or higher. broadening parameter \varGamma for exciton was determined by curve fitting. This determines limit below which double peaks due heavy and light hole are observed.
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