Surface morphology of c-plane sapphire (α-alumina) produced by high temperature anneal
作者： F. Cuccureddu , S. Murphy , I.V. Shvets , M. Porcu , H.W. Zandbergen
DOI: 10.1016/J.SUSC.2010.04.017
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摘要: Abstract A comparative study of the morphological surface evolution c -plane (0001) α-Al 2 O 3 upon annealing was investigated for non-miscut (i.e. substrates with 0° nominal miscut) and vicinal substrates. The samples were annealed in air at 1100 ° C different durations time. Although do not show any step bunching this temperature, miscut a regular ordered stepped morphology clearly defined terraces as revealed by Atomic Force Microscopy (AFM) Transmission Electron (TEM) image analysis. presents number coalescence points, i.e. locations where two steps merge form multiple step. Close to parallel change direction low index direction.
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