The effect of indium additive on the structural relaxation of Se–Sb–Sn semiconducting glasses

摘要: Abstract Differential scanning calorimetry (DSC) has been used to study the kinetics of structural relaxation in glass transition region Se80Sb12Sn8−yIny (y=0, 0.5, and 1) chalcogenide glasses, which were previously annealed at 394 K below temperature. Based on Kovacs–Aklonis–Hutchinson–Ramos model, dependence endothermic peak temperature (Tp) heating rate evaluate parameter. From knowledge this parameter activation energy (Δh) obtained. The shift Tp with annealing time (ta) calculate parameter, controls contribution structure time. Results reveal that Δh decreases In content due replacement some SnSe4/2 units strong bond by Se3In2 weak energy. This reduces cross-linking as well overall mean studied glasses predicted chemical approach. values estimate fragility index is found be range 29.7–31.7 indicating under investigation obtained from glass-forming liquids. excess enthalpy (δH) also calculated, for different times ta, specific heat. δH plotted a function ln(ta) exhibit linear behavior indicates not completely relaxed.