作者: S. Perna , R. Tomasello , T. Scimone , M. d'Aquino , C. Serpico
DOI: 10.1109/TMAG.2016.2628521
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摘要: The magnetization dynamics of a ferromagnet can be influenced by the second-order anisotropy contribution when magnetocrystalline perpendicular is same order out-of-plane demagnetizing field (compensation point). This condition fulfilled in magnetic tunnel junctions (MTJs) where induced interfacial controlled thickness free layer. paper describes, within both micromagnetic and analytical/numerical framework, how switching self-oscillation are affected second near compensation point. We have derived analytical expressions for critical current oscillation frequencies that well reproduced numerical simulations. Our results support design MTJs application either storage nanoscale signal generators.