X‐ray photoelectron spectroscopy of ammonium sulfide treated GaAs (100) surfaces
作者： B. A. Cowans , Z. Dardas , W. N. Delgass , M. S. Carpenter , M. R. Melloch
DOI: 10.1063/1.100970
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摘要: The effect of an ammonium sulfide treatment on the GaAs (100) surface has been investigated by x‐ray photoelectron spectroscopy. produces a slight Ga enrichment and leaves roughly 0.6 monolayer which inhibits initial oxidation surface. is not lost as becomes oxidized but appears to remain near GaAs/oxide interface. Furthermore, in layer, As oxide preferentially drawn relative oxide.
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