Methods of forming a hard mask layer and of fabricating a semiconductor device using the same
作者： Jaihyung Won , Sangho Roh , Eunsol Shin , Sejun Park , Dohyung Kim
DOI:
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摘要: A method of forming a hard mask layer on substrate includes an amorphous carbon using nitrous oxide (N 2 O). source and the O) are introduced to under plasma ambient inert gas. The has nitrogen content ranging from about 0.05 at % 30 oxygen 10 %. In semiconductor device, is patterned, target beneath etched patterned as etch mask.
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