Characterization of a digital ASIC readout system for 11×11 pixelated TlBr detectors

摘要: Thallium bromide (TlBr) is being investigated for use as room temperature semiconductor gamma-ray spectrometers because of its wide band gap (2.68 eV) and high stopping power. When cooled to −20°C, performance better than 1% FWHM at 662 keV has been observed on 5×5×5 mm3 pixelated TlBr detectors. Currently, each nine anode pixels (in a 3 × array) read out individually through separate preamplifiers, limiting the number that can practically be used. VAD_UM digital application specific integrated circuit (ASIC) currently used signals from an array 11×11 pixel anodes 3D CdZnTe detector. This work applies same ASIC by designing building compact system capable reading larger detector (12mm 12mm 5mm opposed current 5mm) while keeping stable operation. We present initial characterization system, including operating power consumption keep various temperatures.