Investigation of the effect of rare earth doping on the electrical and photovoltaic properties of chromotrope 2R thin film devices
作者： G. D SHARMA , S. K GUPTA , M. S ROY
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摘要: Praseodymium (Pr) doped and Samarium (Sm) chromotrope 2R (CHR) were used for the fabrication of Schottky devices, by spin coating technique. The diode in which CHR behaves as an n-type organic semiconductor exhibits rectification behaviour dark. Doping with rare earths imparts accelerated improvement conductivity well effect. observed effects are explained semiconductivity thin films. formation a blocking contact (Schottky barrier) indium tin oxide (ITO) electrode ohmic Al or ln, also confirms its behaviour. position Fermi level shifts toward conduction band edge on earth doping. Additionally, concentration free carriers mobility electrons increase upon doping, simultaneous decrease trap concentration. Various electrical parameters such barrier height (φb), density ionized donor (Ns) depletion layer width (W) calculated from detail capacitance–voltage analysis (C–V) characteristics. photo-action spectra devices absorption reveal at ITO-doped interface Ohmic Al-doped interface. Photovoltaic measurements these provide short circuit photocurrent (Jsc), open voltage (Voc), fill factor (FF) power conversion efficiency (η). effect doping photovoltaic discussed detail. © 1998 Chapman & Hall
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