Light-trapping in photon enhanced thermionic emitters.
作者： Jerónimo Buencuerpo , José M. Llorens , Pierfrancesco Zilio , Waseem Raja , Joao Cunha
DOI: 10.1364/OE.23.0A1220
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摘要: A series of photonic crystal structures are optimized for a photon enhanced thermionic emitter. With realistic parameter values to describe p-type GaAs device we find an efficiency above 10%. The light-trapping increases the performance by 2% over optimal bilayer anti-reflective coating. We very close case Lambertian absorber, but below its maximum performance. To prevent 10% vacuum gap must be dimensioned according concentration factor solar irradiance.
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