New Methods for Making the Qubits of a Solid-State Quantum Computer by Implantation of Single Highly Charged 31 P Ions

摘要: A step-and-repeat and a simultaneous method are proposed evaluated for the implantation of single highly charged 31P ions into Si/SixGe1 – x heterostructure with aim creating qubits solid-state quantum computer. The capabilities existing axially symmetric compound electromagnetic objective lenses ion sources examined in this context. advantages such over electrostatic ones shown. An lens exceptionally small axial aberrations is designed. optical system using implanter. parameters implanter identified that determine its performance. They lateral ion-positioning tolerance, chromatic-aberration coefficient lens, source brightness, multiplicity. equation derived relates parameters. Requirements stated on source. Possible ways discussed improving performance ion-optical system.