Semiconductor device and method of manufacturing semiconductor device
作者： Naoki Izumi
DOI:
关键词:
摘要: A semiconductor device includes: a layer; first conductivity type region of formed in base layer portion the body second to be contact with region; trench by digging from surface thereof pass through so that deepest reaches gate insulating film on bottom and side trench; electrode buried film; source direction orthogonal width respect high-concentration type, position opposed width, having higher impurity concentration than periphery thereof.
lens.org 参考文章(63)
Muhammed Ayman Shibib, Method of doping a semiconductor surface ,(1997)
Dev Alok Torrance Girdhar, Ling Torrance Ma, Power devices having trench-based source and gate electrodes ,(2005)
Tsutomu Uesugi, Masahito Kodama, Vertical semiconductor device having alternating conductivity semiconductor regions ,(2000)
Louis N. Hutter, Merged bipolar/CMOS technology using electrically active trench ,(1987)
Gregory A. Schrantz, Dual layer surface gate JFET having enhanced gate-channel breakdown voltage ,(1989)
Masato Fujinaga, Tatsuya Kunikiyo, Active trench isolation structure to prevent punch-through and junction leakage ,(2000)
Victor J. Silvestri, D. Duan-Lee Tang, Method for forming a void free isolation pattern and resulting structure ,(1986)
Wayne B. Grabowski, Richard K. Williams, Trench semiconductor device having gate oxide layer with multiple thicknesses and processes of fabricating the same ,(2000)
King Owyang, Sze-Hon Kwan, Mike F. Chang, Fwu-Iuan Hshieh, Method of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereof ,(1995)