Stable and Metastable InGaAs/GaAs Island Shapes and Surfactantlike Suppression of the Wetting Transformation

摘要: Contrasting behaviors are observed in InGaAs/GaAs island formation during vapor phase epitaxy: variation of group V partial pressures gives different critical thicknesses for the onset Stranski-Krastanow transformation, surface coverages, ratios between coherent and incoherent islands, dissimilar morphologies upon annealing. The latter experiments show that small lens-shaped islands can be found equilibrium if InGaAs energies minimized, leading to conclusion AsH3 raise act as an impurity-free "morphactant."