Chemical mechanical polishing method of interlayer dielectric layer, and device and electronic equipment with interlayer dielectric layer

摘要: A chemical mechanical polishing method of an interlayer dielectric layer, and a device electronic equipment with the layer are provided; comprises: providing front-end comprising semiconductor substrate first second gates positioned on substrate, wherein width gate is greater than that hard mask formed gate; forming etching stop gate, substrate; layer; executing until surface above forming, exposes performing process to remove not covered by gate. The according invention enables silicon nitride residue disc dents be effectively avoided, polished has good flatness, properties yield increased.