Multi-state magnetoresistance random access cell with improved memory storage density

摘要: A multi-state magnetoresistive random access memory device having a pinned ferromagnetic region with magnetic moment vector fixed in preferred direction the absence of an applied field, non-ferromagnetic spacer layer positioned on region, and free anisotropy designed to provide within N stable positions, wherein is whole number greater than two, layer. The positions can be induced by shape each position has unique resistance value.