Electrostatic performance of InSb, GaSb, Si and Ge p-channel nanowires

摘要: The electrostatic performance of p-type nanowires (NWs) made InSb and GaSb, with special focus on their gate capacitance behavior, is analyzed compared to that achieved by traditional semiconductors usually employed for p-MOS such as Si Ge. To do so, a self-consistent kp simulator has been implemented achieve an accurate description the Valence Band evaluate charge behavior function applied bias. contribution role constituent capacitances, namely insulator, centroid quantum ones are assessed. It demonstrated capacitances strongly dependent semiconductor material. We find good inherent GaSb NWs, comparable Ge counterparts making these III-Sb compounds candidates future technological nodes.