摘要: Aspects already discussed of stacking faults on {111} planes in fcc crystals and the emission dislocations from grain boundaries polycrystals chapter “Line Defects: Dislocations Crystalline Materials” have shown dissociation forming varying extensions faults. In materials, are characterized by partial dislocations, similar dislocation configurations characteristic twin planes. Grain can also be to composed arrays, interfaces separating different crystal regimes (interphase boundaries) as well accommodation misfit strains between phases viewed arrays. this chapter, these planar arrays terms their fundamental structures or microstructures corresponding associated interfacial free energies. some cases, where applicable, disclination concepts applied.