Laser synthesis of germanium tin alloys on virtual germanium
作者： S. Stefanov , J. C. Conde , A. Benedetti , C. Serra , J. Werner
DOI: 10.1063/1.3692175
关键词:
摘要: Synthesis of heteroepitaxial germanium tin (GeSn) alloys using excimer laser processing a thin 4 nm Sn layer on Ge has been demonstrated and studied. Laser induced rapid heating, subsequent melting, re-solidification processes at extremely high cooling rates have experimentally achieved also simulated numerically to optimize the parameters. “In situ” measured sample reflectivity with nanosecond time resolution was used as feedback for simulations directly correlated alloy composition. Detailed characterization GeSn after optimization conditions indicated substitutional concentration up 1% in matrix.
scitation.org
harvard.edu
aip.org
sci-hub.se 参考文章(20)
Shaojian Su, Wei Wang, Buwen Cheng, Weixuan Hu, Guangze Zhang, Chunlai Xue, Yuhua Zuo, Qiming Wang, The contributions of composition and strain to the phonon shift in Ge1―xSnx alloys Solid State Communications. ,vol. 151, pp. 647- 650 ,(2011) , 10.1016/J.SSC.2011.01.017
Gang He, Harry A. Atwater, Interband Transitions in Sn x Ge 1-x Alloys Physical Review Letters. ,vol. 79, pp. 1937- 1940 ,(1997) , 10.1103/PHYSREVLETT.79.1937
C. D. Thurmond, F. A. Trumbore, M. Kowalchik, Germanium Solidus Curves The Journal of Chemical Physics. ,vol. 25, pp. 799- 800 ,(1956) , 10.1063/1.1743083
Grace Huiqi Wang, Eng-Huat Toh, Xincai Wang, Sudhiranjan Tripathy, Thomas Osipowicz, Taw Kuei Chan, Keat-Mun Hoe, Subramaniam Balakumar, Guo-Qiang Lo, Ganesh Samudra, Yee-Chia Yeo, None, Strained SiGeSn formed by Sn implant into SiGe and pulsed laser annealing Applied Physics Letters. ,vol. 91, pp. 202105- ,(2007) , 10.1063/1.2803853
J. Werner, M. Oehme, M. Schmid, M. Kaschel, A. Schirmer, E. Kasper, J. Schulze, Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy Applied Physics Letters. ,vol. 98, pp. 061108- ,(2011) , 10.1063/1.3555439
V.R. D’Costa, J. Tolle, R. Roucka, C.D. Poweleit, J. Kouvetakis, J. Menéndez, Raman scattering in Ge1−ySny alloys Solid State Communications. ,vol. 144, pp. 240- 244 ,(2007) , 10.1016/J.SSC.2007.08.020
J. P. Petrakian, A. R. Cathers, J. E. Parks, R. A. MacRae, T. A. Callcott, E. T. Arakawa, Optical properties of liquid tin between 0.62 and 3.7 eV Physical Review B. ,vol. 21, pp. 3043- 3046 ,(1980) , 10.1103/PHYSREVB.21.3043
Per Kringho/j, Robert G. Elliman, Diffusion of ion implanted Sn in Si, Si1−xGex, and Ge Applied Physics Letters. ,vol. 65, pp. 324- 326 ,(1994) , 10.1063/1.112360
I.T.H. Chang, B. Cantor, Microstructure of pulsed laser irradiated Sn and Ge-50 at.%Sn thin films on Ge single crystal substrates Thin Solid Films. ,vol. 230, pp. 167- 178 ,(1993) , 10.1016/0040-6090(93)90511-M
S. Oguz, William Paul, T. F. Deutsch, B‐Y. Tsaur, D. V. Murphy, Synthesis of metastable, semiconducting Ge‐Sn alloys by pulsed UV laser crystallization Applied Physics Letters. ,vol. 43, pp. 848- 850 ,(1983) , 10.1063/1.94524