Microprobe Raman analysis of picosecond laser annealed implanted silicon
作者： Y. I. Nissim , J. Sapriel , J. L. Oudar
DOI: 10.1063/1.93983
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摘要: The phase transformation induced by a picosecond laser pulse in implanted amorphized silicon has been studied. A single 30‐ps at 1.06‐ and 0.532‐μm wavelengths from mode‐locked neodymium:yttrium aluminum garnet was used to generate multiannular (up five rings) recrystallization pattern on an substrate. Raman microprobe with 1‐μm spatial resolution utilized investigate the annealed spots. These measurements combined polarized light scattering experiments resulted detailed analysis (parallel perpendicular surface) of pattern, that related energy wavelength. At high incident energies crystal is observed central spot first recrystallized ring area.
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