Boosting Polarization Switching-Induced Current Injection by Mechanical Force in Ferroelectric Thin Films.

摘要: When scaling the lateral size of a ferroelectric random access memory (FeRAM) device down to nanometer range, polarization switching-induced displacement current becomes small and challenging detect, which greatly limits storage density FeRAM. Here, we report observation significantly enhanced injection currents, much larger than typical switching induced by in BiFeO3 thin films via conductive atomic force microscopy. Interestingly, this injected can be effectively modulated applying mechanical force. As loading increases from ∼50 ∼750 nN, magnitude critical voltage trigger decreases. Notably, changing an order peak 2-3 orders magnitude. The mechanically boosted could useful for development high-density FeRAM devices. modulation may attributed force-induced changes barrier height interfacial layer width.