ZrO2 on GaN metal oxide semiconductor capacitors via plasma assisted atomic layer deposition

摘要: ZrO2 has been deposited on GaN by Atomic Layer Deposition. Multiple Metal-Oxide-Semiconductor Capacitors with 4.4 nm, 5.4 nm, and 8.5 nm of oxide were fabricated Cr electrodes. Capacitance measurements produce capacitance densities as high 3.8 μF/cm2. Current 0.88 A/cm2 at 1 V for the 4.4 nm oxides hysteresis values less than 6 mV observed 5.8 nm oxide, indicating an interfacial Dit not greater 6.4 × 1010 cm2. Temperature dependent current revealed no signature Poole-Frankel component. Comprehensive assessment these indicates a low defect density formed number interface states.