作者: Jian Liu , Ming Liu , Gregory Collins , Chonglin Chen , Xuening Jiang
DOI: 10.1021/CM901479G
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摘要: Epitaxial (LaBa)Co2O5+δ thin films were grown on (001) LaAlO3 single-crystal substrates using pulsed laser deposition. Microstructure characterizations from X-ray diffraction and electron microscopy indicate that the are highly c-axis oriented with cube-on-cube epitaxy. Transport property measurements have typical semiconductor behavior a novel phase transition hysteresis phenomena at 540 K. The chemical dynamic studies reveals resistance of film changes drastically change redox environment, i.e., magnitude changes, ΔR = 1 × 102 ⇔ 106 Ω, is found within short response time (∼700 ms). These suggest as-grown extraordinary sensitivity to reducing-oxidizing environment exceedingly fast surface exchange rate.