High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates
作者： K. Inoue , J.C. Harmand , T. Matsuno
DOI: 10.1016/0022-0248(91)90992-E
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摘要: Abstract We report on the lattice-mismatched growth and properties of InGaAs/InAlAs modulation-doped heterostructures GaAs substrates for a full In composition range, by molecular beam epitaxy using linearly graded InGaAs or InGaAlAs buffer layer grown at relatively low temperature. High electron mobilities 25,000 to 118,000 cm2/V⋯s were obtained 77 K from 0.3 0.8. The observed monotonical increase mobility in this range agreed well with theoretical calculation. It has been shown that use wider bandgap material, such as InGaAlAs, is very effective reducing residual carrier concentration 1×1012 less than 1x1011 cm−2.
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