作者: H. Dieckamp , A. Sosin
DOI: 10.1063/1.1722280
关键词:
摘要: Young's modulus and internal friction measurements are reported on high‐purity copper following electron bombardment. The is observed to rise rapidly with flux reaching an early saturation followed by a slow decrease. rapid attributed dislocation pinning. rate of temperature dependent in the range from −195°C about 0°C suggesting defect migration at low temperatures. decrease ``bulk effect'' due interstitial‐vacancy pairs.