作者: Masafumi Yamaguchi , Tatsuya Takamoto , Kenji Araki
DOI: 10.1016/J.SOLMAT.2006.06.028
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摘要: Abstract III–V compound multi-junction (MJ) (tandem) solar cells have the potential for achieving high conversion efficiencies of over 50% and are promising space terrestrial applications. We proposed AlInP–InGaP double hetero (DH) structure top cell, wide-band gap InGaP DH tunnel junction sub cell interconnection, lattice-matched InGaAs middle cell. In 2004, we successfully fabricated world-record efficiency concentrator InGaP/InGaAs/Ge 3-junction with an 37.4% at 200-suns AM1.5 as a result widening band gap, current matching cells, precise lattice materials, proposal InGaP–Ge heteroface bottom introduction DH-structure junction. addition, realized high-efficiency modules (with area 7000 cm 2 ) out-door 27% developing low optical loss Fresnel lens homogenizers, designing thermal conductivity modules. Future prospects also presented. MJ 3rd-generation in addition to 1st-generation crystalline Si 2nd-generation thin-film cells. now challenging develop low-cost output power 400 W/m applications high-efficiency, light-weight