Electronic properties of graphene-single crystal diamond heterostructures

摘要: Single crystal diamond has been used as a substrate to support single layer graphene grown by chemical vapor deposition methods. It is possible chemically functionalise the surface, and in present case H-, F-, O-, N-group have purposefully added prior deposition. The electronic properties of resultant heterostructures vary strongly; p-type with good mobility band gap ∼0.7 eV created when H-terminated layers are used, whilst more metallic-like character (high carrier density low mobility) arises N(O)-terminations introduced. Since it relatively easy pattern these functional groups on this suggests that approach may offer an exciting route 2D device structures sheets.