Hysteresis in the I–V Tunneling Characteristics of n‐Type BaTiO3 Ceramics
作者： Taras V. Kolodiazhnyi , Daniel F. Thomas
DOI: 10.1111/J.1151-2916.2000.TB01160.X
关键词:
摘要: Scanning tunneling microscopy (STM) and spectroscopy (STS) have been applied to study the surface electronic properties of n -type BaTiO3 ceramics under ultrahigh vacuum at various oxygen partial pressures. I–V characteristics vacuum-annealed do not exhibit rectifying behavior, implying that Fermi level is pinned surface. The band gap annealed 540°C equal 1 eV. top edge valence located 0.7 eV below level. Hysteresis in has observed high Dosing with increases unpins As a result, acquire features similar those for Schottky-type diodes. spectra pressures attributed changes potential barrier due adsorption/desorption modulated by tip-sample difference.
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