Probing Bulk Transport, Interfacial Disorders, and Molecular Orientations of Amorphous Semiconductors in a Thin‐Film Transistor Configuration

摘要: Thin film transistors (TFTs) can be used to determine the bulk-like mobilities of amorphous semiconductors. Different amine-based organic hole transporting materials (HTs) in light-emitting diodes have been investigated. In addition, present study also measures TFT two iridium phosphors: Ir(ppy)3 and Ir(piq)3. These are grown separately on SiO2 polystyrene (PS). On SiO2, found 1–2 orders smaller than bulk values obtained by time-of-flight (TOF) technique. PS gate dielectric layer, good agreement TOF data. Only 10 nm semiconductor is sufficient for TFTs achieve mobilities. Using Gaussian disorder model, it that surface, when compared values, energetic disorders (s) HTs increase simultaneously, high temperature limits (µ∞) carrier decrease. Both s µ∞ contribute reduction mobility. The related presence randomly oriented polar Si-O bonds. orientations more planar molecules which tend lie horizontally surface.