作者: Nacer Badi , Syed Khasim , Apsar Pasha
DOI: 10.1007/S00339-019-3149-9
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摘要: In this work, we report on the synthesis of nitrogen-doped MgZnO thin films via sol–gel method using urea as a nitrogen source. The effect doping physical and optical properties was investigated through FTIR, UV–Vis spectroscopy, XRD, SEM, TEM techniques. FTIR spectra confirm formation nanoparticles, while SEM revealed crystalline structure for ternary alloys with particle size less than 50 nm. MgZnO:N nanoparticles were analysed diffused reflectance spectroscopy. diffuse show strong dependence content in which may be due to π → π* electron transition 2px oxygen 2pz sub-shell non-bonding orbitals. Current density–voltage characteristics by fabricating Schottky diode (ITO-MgZnO:N-Al) structure. J–V device non-ohmic behavior increase current density increased nanoparticles. Due improved electronic properties, these play significant role micro- optoelectronic devices.