Applications of tetrahedral amorphous carbon in limited volatility memory and in field programmable gate arrays

摘要: Modification of tetrahedral amorphous carbon by nitrogen addition or heating has important effects on its electrical conductivity. In the case at a level approximately 3% new conductivity mode is introduced which can be turned off bias. This used to form memory device. Using first principles molecular dynamics simulations in local density approximation and spin approximation, we study structural changes resulting when an electron removed from atom. Heating also permanent way, producing thermodynamically stable with high degree sp2 bonding. We show that this effect connections between two metal layers structure known as antifuse, far superior application other choices such silicon nitride, aluminium nitride silicon.