作者: Paul Pistor , Raquel Caballero , Dimitrios Hariskos , Victor Izquierdo-Roca , Rolf Wächter
DOI: 10.1016/J.SOLMAT.2008.09.015
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摘要: Abstract Indium sulphide layers were deposited by thermal evaporation from compound In 2 S 3 powder provided different suppliers. The source material quality was systematically analysed in terms of contamination, stoichiometry, grain size, behaviour and crystallinity. It found to vary significantly for influence stability on layer growth properties investigated various optical, crystallographic surface analysis methods. findings correlated with the performance solar cells prepared an buffer layer. This includes jV-curves quantum efficiencies Cu ( , Ga ) Se absorbers. After a post annealing step air, best reached certified efficiency 15.2% remarkably high fill factor (75.6%) open circuit voltage (677 mV).