Combining strong interface recombination with bandgap narrowing and short diffusion length in Cu2ZnSnS4 device modeling
作者： C. Frisk , T. Ericson , S.-Y. Li , P. Szaniawski , J. Olsson
DOI: 10.1016/J.SOLMAT.2015.09.019
关键词:
摘要: … Theoretically, it is possible to have as much as −300 meV bandgap shift, but the formation energies for the defect configurations with highest negative energy shift are high and therefore …
sci-hub.se 参考文章(27)
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