Compton scattering studies of the electron momentum distribution in indium phosphide

摘要: Abstract The electron momentum anisotropy of indium phosphide has been studied by measuring the directional Compton profiles single crystals with use radiation from an 241 Am gamma source. Three different samples, cut along [100], [110] and [111] planes, were used. experimental compared results based on linear combination Gaussian orbitals (LCGO) method. agreement is very good our theoretical results. It found that extrema appearing in dependences q anisotropies have intimate connection bonding properties semiconductor. A self-consistent, all-electron, local density calculation for partial states, total states charge analysis also presented here.