Experimental and numerical results correlation during extreme use of power MOSFET designed for avalanche functional mode

作者: L. Dupont , J.L. Blanchard , R. Lallemand , G. Coquery , J.M. Morelle

DOI: 10.1016/J.MICROREL.2010.07.127

关键词:

摘要: Abstract Cost, weight and size reduction constrained designers of power electronic for micro hybrid vehicle to use MOSFET under extreme conditions like avalanche mode. This paper shows the influence solder voids onto die temperature distribution a specifically designed MOSFET. In first part this paper, methodology is presented perform fast dynamic measurements during (400 A–80 μs). second comparison between experimental results finite elements electro-thermal simulation shown operating in high conduction mode (500 A–100 ms). Finally correlated numerical model used evaluate sensitivity chip distribution.

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